Figure 10From: Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch TestsSubsurface topography of the double scratches at different scratch intervals: (a) 3 μm: (a1) Subsurface topography; (b) 5 μm: (b1) Subsurface topography; (c) 8 μm: (c1) Subsurface topography; and (d) 11 μm: (d1) Subsurface topographyBack to article page