Figure 8From: Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch TestsCross-section characteristics of the scratches under different scratch intervals: (a) 3 μm: (a1) Profile curve; (b) 5 μm: (b1) Profile curve; (c) 8 μm: (c1) Profile curve; (d) 11 μm: (d1) Profile curve; (e) 14 μm: (e1) Profile curveBack to article page