Figure 13

Anti-etching behavior of the distorted silicon layer on groove structure [27]: (a) A groove produced by scratching on Si(100) surface. (b) AFM image of the scratch after being etched in 10 wt.% HF solution for 15 min to remove surface oxidation layer. (c) AFM image of the scratch after being etched in 20 wt.% KOH + IPA solution for 25 min