Figure 20
Fabrication of line-array patterns by friction-induced selective etching of Si3N4 mask and traditional friction-induced selective etching [79]: (a) Friction-induced selective etching of Si3N4 mask. Line-array pattern with 2.5 μm in depth was fabricated by the scratching on Si3N4 mask under Fn = 100 m·N, post-etching in HF solution for 30 min, and KOH solution for 4 h in sequence, (b) Traditional friction-induced selective etching (Line-array pattern with 0.54 μm in height fabricated by scratching under Fn = 70 mN and post-etching in KOH solution for 1 h)